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| STPS120MF Power Schottky rectifier in flat package Features Very low profile package: 0.85 mm Backward compatible with standard STmite footprint Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance Avalanche capability specified Hologen free molding compound Table 1. A K STmite flat (DO222-AA) Device summary IF(AV) VRRM Tj (max) VF (max) 1A 20 V 150 C 0.41 V Description Single Schottky rectifier suited for switch mode power supplies and high frequency dc to dc converters. Packaged in STmite flat, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the very small size of the package this device fits battery powered equipment (cellular, notebook, PDA's, printers) as well as chargers and PCMCIA cards. May 2008 Rev 1 1/7 www.st.com Characteristics STPS120MF 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt 1. dPtot --------------dTj Absolute ratings (limiting values) Parameter Repetitive peak reverse voltage Forward current rms Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature(1) Tc = 140 C = 0.5 tp = 10 ms sinusoidal tp = 1 s Tj = 25 C Value 20 2 1 50 1400 -65 to + 150 150 10000 Unit V A A A W C C V/s Critical rate of rise of reverse voltage (rated VR, Tj = 25 C) 1 < -------------------------- condition to avoid thermal runaway for a diode on its own heatsink Rth ( j - a ) Table 3. Symbol Rth(j-c) Rth(j-a)(1) Thermal resistance Parameter Junction to case Junction to ambient Value 20 250 Unit C/W C/W 1. Mounted with minimum recommended pad size, PC board FR4 Table 4. Symbol Static electrical characteristics Parameter Test conditions Tj = 25 C Tj = 100 C VR = VRRM Min. Typ. 1.3 275 0.6 VR = 10 V 145 0.4 VR = 5 V 105 0.44 IF = 1 A 0.36 0.48 IF = 2 A 0.42 Max. 3.9 850 2.0 A 450 10. 300 0.49 0.41 V 0.54 0.48 Unit IR(1) Reverse leakage current Tj = 25 C Tj = 100 C Tj = 25 C Tj = 100 C Tj = 25 C VF(1) Forward voltage drop Tj = 100 C Tj = 25 C Tj = 100 C 1. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.34 x IF(AV) + 0.07 IF2(RMS) 2/7 STPS120MF Characteristics Figure 1. PF(AV)(W) Conduction losses versus average Figure 2. current 1.2 =0.1 =0.05 =0.2 =0.5 =1 Average forward current versus ambient temperature ( = 0.5) 0.6 IF(AV)(A) Rth(j-a)=Rth(j-c) 1.1 1.0 0.9 0.8 0.7 0.5 0.4 0.3 0.6 0.5 Rth(j-a)=250C/W 0.2 T 0.4 0.3 0.2 0.1 IF(AV)(A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 =tp/T 1.0 tp 0.1 0.0 Tamb(C) 0 25 50 75 100 125 150 1.1 1.2 Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature PARM(tp) PARM(1 s) 1 1.2 1 PARM(Tj) PARM(25 C) 0.1 0.8 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 25 50 75 100 125 150 Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration IM(A) 6 1.0 0.9 Zth(j-a)/Rth(j-a) 5 0.8 0.7 0.6 Ta=25C 4 3 Ta=75C 0.5 0.4 0.3 IM t =0.5 2 Ta=125C 1 0.2 0.1 0.0 Single pulse t(s) 1.E-02 1.E-01 1.E+00 tp(s) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 1.E-03 1.E-02 3/7 Characteristics STPS120MF Figure 7. Reverse leakage current versus reverse voltage applied (typical values) Figure 8. Junction capacitance versus reverse voltage applied (typical values) F=1MHz Vosc=30mV Tj=25C 1.E+01 IR(mA) 1000 Tj=150C C(pF) 1.E+00 Tj=125C 1.E-01 Tj=100C 100 1.E-02 Tj=75C Tj=50C 1.E-03 Tj=25C VR(V) VR(V) 10 12 14 16 18 20 1.E-04 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 Figure 9. IFM(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 Forward voltage drop versus forward current (low level) Figure 10. Forward voltage drop versus forward current (high level) IFM(A) 100.0 Tj=100C (Maximum values) 10.0 Tj=100C (Maximum values) Tj=100C (Typical values) Tj=100C (Typical values) Tj=25C (Maximum values) Tj=25C (Maximum values) 1.0 VFM(V) 0.1 0.1 0.2 0.3 0.4 0.5 0.6 VFM(V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 11. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35 m, typical values) 250 225 200 175 150 125 100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Rth(j-a)(C/W) S(cm) 4/7 STPS120MF Package information 2 Package information Epoxy meets UL94, V0 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 5. STmite flat dimensions Dimensions Ref. Millimeters Min. E1 L L1 Inches Min. Typ. Max. Typ. 0.85 0.55 0.85 0.15 1.90 3.80 2.95 0.55 2.40 0.60 0.35 Max. 0.95 0.65 1.00 0.25 2.05 3.90 3.10 0.80 2.60 0.75 0.50 A L2 0.80 0.40 0.70 0.10 1.75 3.60 2.80 0.50 2.10 0.45 0.20 0.031 0.033 0.037 0.016 0.022 0.026 0.027 0.033 0.039 0.004 0.006 0.009 0.069 0.075 0.081 0.142 0.150 0.154 0.110 0.116 0.122 0.020 0.022 0.031 0.083 0.094 0.102 0.018 0.024 0.030 0.008 0.014 0.020 b D b b2 b2 c D E E1 L L1 L2 L3 E L3 c A Figure 12. STmite flat recommended footprint (all dimensions in mm) 0.85 0.63 2.00 0.65 0.65 0.95 1.95 4.13 5/7 Ordering information STPS120MF 3 Ordering information Table 6. Ordering information Marking F12 Package STmite flat Weight 16 mg Base qty 12000 Delivery mode Tape and reel Order code STPS120MF 4 Revision history Table 7. Date 15-May-2008 Document revision history Revision 1 First issue. Changes 6/7 STPS120MF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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